High performance InGaAs/InP avalanche photodiode integrated with metal-insulator-metal microcavity

Reducing the dark current of InGaAs/InP avalanche photodiodes (APDs) is an important way to improve its performance. Decreasing active size can reduce but sacrifice quantum efficiency. In this paper, metal–insulator-metal (MIM) microcavity integrated with APD, which converge light from tens micrometers several micrometers, so as compensate for loss detection efficiency caused by reduction APD. Through photoelectric joint simulation, optical response device be obtained, and coupling effect between MIM structure APD analyzed directly. The simulation results show that photocurrent ratio twice free traditional 3 dB bandwidth reaches 5.8 GHz. When applied array, crosstalk pixels found negligible.